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TK13A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)
TK13A60D
Switching Regulator Applications
* * * * Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 A (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 30 13 52 50 511 13 5.0 150 -55 to 150 A W mJ A mJ C C
1: Gate 2: Drain 3: Source
Unit V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-67 2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2 Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 62.5 Unit C/W C/W 1
Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25C (initial), L = 5.3 mH, RG = 25 , IAR = 13 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 13 A Duty 1%, tw = 10 s Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 50 ID = 6.5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6.5 A VDS = 10 V, ID = 6.5 A Min 600 2.0 1.8 Typ. 0.33 6.5 2300 10 250 50 100 25 140 40 25 15 Max 1 10 4.0 0.43 pF Unit A A V V S

ns
RL = 30 VDD 200 V

nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 13 A, VGS = 0 V IDR = 13 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1600 20 Max 13 52 -1.7 Unit A A V ns C
Marking
K13A60D
Part No. (or abbreviation code) Lot No. A line indicates Lead(Pb)-Free Finish
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ID - VDS
20 COMMON SOURCE Tc = 25C PULSE TEST 10 8 30 10 9.0
ID - VDS
8.0 COMMON SOURCE Tc = 25C PULSE TEST
(A)
16
(A)
25 7.5 20
7.0
DRAIN CURRENT ID
12 6.5 8 6.0 4 5.5 VGS = 5V 0 0 2 4 6 8 10
DRAIN CURRENT ID
15
7.0 6.5
10 6.0 5 VGS = 5.5V
0 0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE
VDS
(V)
DRAIN-SOURCE VOLTAGE
VDS
(V)
ID - VGS
COMMON SOURCE VDS = 20 V 25 PULSE TEST 20
VDS - VGS
10
VDS (V)
30
(A)
8
COMMON SOURCE Tc = 25 PULSE TEST
DRAIN CURRENT ID
DRAIN-SOURCE VOLTAGE
6 ID = 13 A
15
4
10 Tc = 100C 5 Tc = 25C Tc = -55C 0 0 2 4 6 8 10
2
6.5 3
0 0
4
8
12
16
20
GATE-SOURCE VOLTAGE
VGS
(V)
GATE-SOURCE VOLTAGE
VGS
(V)
Yfs - ID FORWARD TRANSFER ADMITTANCE Yfs (S)
100
RDS (ON) - ID
1
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
COMMON SOURCE VDS = 20 V PULSE TEST
10 100 25 Tc = -55C 1
VGS = 10 V15 V
0.1
COMMON SOURCE Tc = 25C PULSE TEST 0.01 0.1 1 10 100
0.1 0.1
1
10
100
DRAIN CURRENT ID
(A)
DRAIN CURRENT ID
(A)
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RDS (ON) - Tc (A)
1.2 100
IDR - VDS
COMMON SOURCE Tc = 25C PULSE TEST
DRAIN-SOURCE ON RESISTANCE RDS (ON) ( )
COMMON SOURCE 1.0 VGS = 10 V PULSE TEST
DRAIN REVERSE CURRENT IDR
0.8 ID = 13A 0.6 3 6.5
10
0.4
1
10 5 3 1 VGS = 0, -1 V -0.6 -0.8 -1 -1.2
0.2
0 -80
-40
0
40
80
120
160
0.1 0
-0.2
-0.4
CASE TEMPERATURE
Tc
(C)
DRAIN-SOURCE VOLTAGE
VDS
(V)
CAPACITANCE - VDS
10000 5 Ciss
Vth - Tc
GATE THRESHOLD VOLTAGE Vth (V)
(pF)
4
1000 Coss 100
C
3
CAPACITANCE
2
10
Crss
COMMON SOURCE VGS = 0 V f = 1 MHz 1 Tc = 25C 0.1 1
1
COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST -40 0 40 80 120 160
10
100
0 -80
DRAIN-SOURCE VOLTAGE
VDS
(V)
CASE TEMPERATURE
Tc
(C)
PD - Tc VDS (V)
80 500
DYNAMIC INPUT / OUTPUT CHARACTERISTICS (V) GATE-SOURCE VOLTAGE VGS
20
DRAIN POWER DISSIPATION PD (W)
400
VDS
16 VDD = 100 V 400
60
DRAIN-SOURCE VOLTAGE
300
12
40
200 VGS 100
200 COMMON SOURCE ID = 13 A Tc = 25C PULSE TEST
8
20
4
0
0
40
80
120
160
0 0
20
40
60
0 80
CASE TEMPERATURE
Tc
(C)
TOTAL GATE CHARGE
Qg
(nC)
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TK13A60D
rth - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
10
1
Duty = 0.5 0.2
0.1
0.1 0.05 0.02 PDM t
0.01
0.01 SINGLE PULSE
T Duty = t/T Rth (ch-c) = 2.5C/W 10 m 100 m 1 10
0.001 10
100
1m
PULSE WIDTH
tw (s)
SAFE OPERATING AREA
100 ID max (pulsed) * 100 s * 10 1 ms * 600
EAS - Tch
AVALANCHE ENERGY EAS (mJ)
ID max (continuous) *
500
DRAIN CURRENT ID
(A)
400
1
DC operation Tc = 25C
300
200
0.1
100
0 *: SINGLE NONREPETITIVE PULSE 0.01 Tc = 25C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 0.001 1 10
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL) Tch (C)
VDSS max 1000
100
15 V -15 V
BVDSS IAR VDD VDS
DRAIN-SOURCE VOLTAGE
VDS
(V)
TEST CIRCUIT RG = 25 VDD = 90 V, L = 5.3 mH
WAVEFORM
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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